1.

Conference Proceedings
Conference Proceedings
1. Classical Versus First-Principles Structural Relaxation: Calculated Electronic Excitations and Optical Properties of Ge Nanocrystals Embedded in a SiC Matrix
Cappellini, Giancarlo ; Weissker, H. -Ch. ; De-Salvator, D. ; Furthmuller, J. ; Bechstedt, F. ; Satta, G. ; Casula, F. ; Colombo, L.
Pub. info.: Group-IV semiconductor nanostructures : symposium held November 29-December 2, 2004, Boston, Massachusetts, U.S.A..  pp.121-128,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 832
2.

Conference Proceedings
Conference Proceedings
2. Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations
Weissker, H.-C. ; Furthmuller, J. ; Bechstedt, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.743-746,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Interplay of Surface Structure, Bond Stacking and Heteropolytypic Growth of SiC
Grossner, U. ; Fissel, A. ; Furthmuller, J. ; Richter, W. ; Bechstedt, F.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.211-214,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Electronic States of Vacancies in 3C- and 4H-SiC
Zywietz, A. ; Furthmuller, J. ; Bechstedt, F.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.643-646,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Group-III Adsorption and Bond Stacking on SiC(111) Surfaces
Grossner, U. ; Furthmuller, J. ; Bechstedt, F.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.427-430,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
6.

Conference Proceedings
Conference Proceedings
6. Dielectric Function of 'Narrow' Band Gap InN
Goldhahn, R. ; Shokhovets, S. ; Cimalla, V. ; Spiess, L. ; Ecke, G. ; Ambacher, O. ; Furthmuller, J. ; Bechstedt, F. ; Lu, H. ; Schaff, W.J.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.361-368,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
7.

Conference Proceedings
Conference Proceedings
7. Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations
Weissker, H.-C. ; Furthmuller, J. ; Bechstedt, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.743-746,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393