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Conference Proceedings

1. CHARACTERIZATION OF SINGLE AND POLYCRYSTALLINE SILICON BY EXTENSIONS OF THE ELYMAT TECHNIQUE

Foell, H. ; Lehmann, V. ; Lippik, W.

Pub. info.:	Proceedings of the Satellite Symposium to ESSDERC 93 Grenoble/France : crystalline defects and contamination: their impact and control in device manufacturing. pp.252-261, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-15

Conference Proceedings

2. Transient Current Measurements on the Si-HF System as Direct Image of the Oxygen Thickness in the Oscillation Regime

Prange, R. ; Carstensen, J. ; Foell, H.

Pub. info.:	Proceedings of the symposium on advances in mathematical modeling and simulation of electrochemical processes and oxygen depolarized cathodes and activated cathodes for chlor-alkali and chlorate processes : proceedings of the symposium. pp.158-170, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-10

Conference Proceedings

3. Percolation Model for the Current Oscillation in the Si-HF System

Carstensen, J. ; Prange, R. ; Foell, H.

Pub. info.:	Proceedings of the symposium on advances in mathematical modeling and simulation of electrochemical processes and oxygen depolarized cathodes and activated cathodes for chlor-alkali and chlorate processes : proceedings of the symposium. pp.148-157, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-10

Conference Proceedings

4. New developments of the ELYMAT technique

Foell, H.

Pub. info.:	ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands. pp.83-92, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-30

Conference Proceedings

5. Comparative SEM and Cathodoluminescence Microanalysis of Porous GaP Structures

Stevens-Kalceff, M. A. ; Langa, S. ; Tiginyanu, I. M. ; Carstensen, J. ; Christophersen, M. ; Foell, H.

Pub. info.:	Microcrystalline and nanocrystalline semiconductors-2000 : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, PA.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	638

Conference Proceedings

6. CELLO: An Advanced LBIC Measurement Technique for Solar Cell Local Characterisation

Carstensen, J. ; Popkirov, G. ; Bahr, J. ; Foell, H.

Pub. info.:	Photovoltaic and photoactive materials - properties, technology and applications. pp.321-324, 2002. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	80

Conference Proceedings

7. MAPPING OF DEFECT RELATED SILICON BULK AND SURFACE PROPERTIES WITH THE ELYMAT TECHNIQUE

Carstensen, J. ; Lippik, W. ; Foell, H.

Pub. info.:	Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology. pp.1105-1116, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-10

Conference Proceedings

8. Detection of point defect chains in ion irradiated silicon by high resolution electron microscopy

Krakow, W. ; Tan, T.Y. ; Foell, H.

Pub. info.:	Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.. pp.185-190, 1981. New York. North Holland
Title of ser.:	Materials Research Society symposia proceedings
Ser. no.:	2

Conference Proceedings

9. A tentative identification of the nature of {113} stacking faults in Si - model and experiment

Tan, T.Y. ; Foell, H. ; Mader, S. ; Krakow, W.

Pub. info.:	Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.. pp.179-184, 1981. New York. North Holland
Title of ser.:	Materials Research Society symposia proceedings
Ser. no.:	2

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Conference Proceedings

10. Undissociated dislocations and intermediate defects in As+ ion damaged silicon

Foell, H. ; Tan, T.Y. ; Krakow, W.

Pub. info.:	Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.. pp.173-177, 1981. New York. North Holland
Title of ser.:	Materials Research Society symposia proceedings
Ser. no.:	2

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