1.

Conference Proceedings
Conference Proceedings
1. SOLID PHASE EPITAXY OF Si1-xGex ON Si STRAINED LAYERS
Robinson, B.J. ; Chilton, B.T. ; Ferret, P. ; Thompson, D.A.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.353-358,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
2.

Conference Proceedings
Conference Proceedings
2. Growth of Cubic Silicon Carbide Crystals from Solution
Eid, J. ; Santailler, J.L. ; Ferrand, B. ; Ferret, P. ; Pesentia, J. ; Basset, A. ; Passero, A. ; Mantzari, A. ; Polychroniadis, E.K. ; Balloud, C. ; Soares, P. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.123-128,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Templier, F. ; Ferret, P. ; Di Cioccio, L. ; Collard, E. ; Lhorte, A. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1161-1164,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
Pons, M. ; Blanquet, E. ; Dedulle, J. M. ; Ucar, M. ; Wellmann, P. ; Danielsson, O. ; Ferret, P. ; Cioccio, L. Di ; Baillet, F. ; Chaussende, D. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.3-8,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Meziere, J. ; Ferret, P. ; Blanquet, E. ; Pons, M. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.731-734,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
Pons, M. ; Meziere, J. ; Wang Tang Kuan, S. ; Blanquet, E. ; Ferret, P. ; Di Cioccio, L. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.223-226,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
Pons, M. ; Meziere, J. ; Wan.Tang.Kuan,S ; Blanquet, E. ; Ferret, P. ; Cioccio, L. Di. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.223-226,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
Meziere, J. ; Pons, M. ; Dedulle, J.-M. ; Blanquet, E. ; Ferret, P. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.141-144,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Templier, F. ; Ferret, P. ; Cioccio, L. Di. ; Collard, E. ; Lhorte, A. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1161-1164,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
Ferret, P. ; Leray, A. ; Feuillet, G. ; Lyan, P. ; Pudda, C. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.201-204,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436