1.

Conference Proceedings
Conference Proceedings
1. Ab-initio cluster calculation of hyperfine interactions and total-energy surfaces for N in diamond,silicon and germanium
Fazzio,A. ; Cunha,C.R.Martins da ; Canuto,S.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.463-468,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Theoretical Calculations of Antisite and Antisite-Like Defects in GaP
Fazzio,A. ; Venezela,P.P.M. ; Sehmidt,T.M.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.991-994,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
3.

Conference Proceedings
Conference Proceedings
3. Theoretical study of antistructure defects in GaAs
Janotti,A. ; Fazzio,A. ; Piquini,P. ; Mota,R.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.975-980,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. N-vacancy defects in c-BN and w-BN
Mota,R. ; Piquini,P. ; Torres,V. ; Fazzio,A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1275-1280,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. Trends in the Metastability of DX-Centers
Schmidt,T.M. ; Fazzio,A. ; Caldas,M.J.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.273-278,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
6.

Conference Proceedings
Conference Proceedings
6. Metastability and Electronic Structure of Periodically n-Type and p-Type 6-Doped Layer in GaAs
Fazzio,A. ; Schmidt,T.M.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.421-424,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
7.

Conference Proceedings
Conference Proceedings
7. Correlation Effects in Native Defects in GaAs
Caldas,M.J. ; Fazzio,A.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.119-124,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41