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Conference Proceedings

1. Full Si Wafer Conversion into Bulk 3C-SiC

Leycuras, A. ; Tottereau, O. ; Vicente, P. ; Falkovsky, L.A. ; Girard, P. ; Camassel, J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.147-150, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Raman Scattering by Coupled Phonon-Plasmon Modes

Falkovsky, L.A.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.613-616, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

3. Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC

Kunert, H.W. ; Maurice, T.P. ; Hauser, T. ; Malherbe, J.B. ; Prinsloo, L.C. ; Brink, D.J. ; Falkovsky, L.A. ; Camassel, J.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.275-278, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

4. Full Si Wafer Conversion into Bulk 3C-SiC

Leycuras, A. ; Tottereau, O. ; Vicente, P. ; Falkovsky, L.A. ; Girard, P. ; Camassel, J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.147-150, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393