1.

Conference Proceedings
Conference Proceedings
1. CHARACTERIZATION OF DEEP LEVELS BY MICROWAVE ABSORPTION SPECTOROSCOPY.
FERENCZI,G. ; HUBER,D.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.521-526,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
2.

Conference Proceedings
Conference Proceedings
2. IDENTIFICATION OF THE CARBON ASSOCIATED RADIATION DAMAGE LEVELS IN SILICON.
FERENCZI,G. ; LONDOS,C.A. ; PAVELKA,T. ; SOMOGYI,M. ; MERTENS,A.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part3  pp.947-951,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12