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18 results

Conference Proceedings

1. Waveguide optics of new short-wavelength laser diodes

Eliseev,P.G.

Pub. info.:	Laser Optics 2000 : Semiconductor Lasers and Optical Comminication, 26-30 June 2000, St. Petersburg, Russia. pp.12-23, 2000. Bellingham, Washington. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4354

Conference Proceedings

2. Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method

Smolyakov,G.A. ; Smagley,V.A. ; Nakwaski,W. ; Eliseev,P.G. ; Osinski,M.

Pub. info.:	Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA. pp.324-335, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3625

Conference Proceedings

3. Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

Osinski,M. ; Eliseev,P.G. ; Lee,J. ; Smagley,V.A. ; Sugahara,T. ; Sakai,S.

Pub. info.:	Design, fabrication, and characterization of photonic devices : 30 November-3 December 1999, Singapore. pp.86-97, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3896

Conference Proceedings

4. High-injection behavior of InGaAs quantum well

Eliseev,P.G. ; Akimova,I.V.

Pub. info.:	Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA. pp.728-739, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3625

Conference Proceedings

5. Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation

Osihski,M. ; Smagley,V.A. ; Fu,C.-S. ; Smolyakov,G.A. ; Eliseev,P.G.

Pub. info.:	Physics and simulation of optoelectronic devices VIII : 24-28 January 2000, San Jose, USA. Part1 pp.40-55, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3944

Conference Proceedings

6. High-power semiconductor lasers and diode-pumped solid state lasers

Eliseev,P.G. ; Bezotosny,V.V.

Pub. info.:	6th International Conference on Industrial Lasers and Laser Applications '98 : 27-29 June 1998, Shatura, Moscow Region, Russia. pp.2-12, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3688

Conference Proceedings

7. GaN Surface ablation by femtosecond pulses:atomic force microscopy studies and accumulation effects

Eliseev,P.G. ; Juodkazis,S. ; Sugahara,T. ; Sun,H.-B. ; Matsuo,S. ; sakai,S. ; Misawa,H.

Pub. info.:	High-power laser ablation III, 24-28 April 2000, Santa Fe, USA. pp.546-556, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4065

Conference Proceedings

8. Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AIGaN double heterostructure

Eliseev,P.G. ; Smagley,V.A. ; Perlin,P. ; Sartori,P. ; Osinski,M.

Pub. info.:	Physics and Simulation of Optoelectronic Devices IV. pp.97-108, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2693

Conference Proceedings

9. Optimization of active-layer and cavity design parameters for low-threshold GaN/AIGaN double-heterostructure diode lasers

Osinski,M. ; Eliseev,P.G.

Pub. info.:	Physics and Simulation of Optoelectronic Devices IV. pp.109-120, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2693

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Conference Proceedings

10. Emission of strained-layer InGaAs quantum well under high-injection level:study of bandfilling and broadening effects

Akimova,I.V. ; Eliseev,P.G.

Pub. info.:	Physics and Simulation of Optoelectronic Devices IV. pp.640-651, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2693

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Author: Eliseev,P.G.