1.

Conference Proceedings
Conference Proceedings
1. Influence of the N/AI Ratio in the Gas Phase on the Growth of AIN by High Temperature Chemical Vapor Deposition (HTCVD)
A. Claudel ; E. Blanquet ; D. Chaussende ; D. Pique ; M. Pons
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.987-990,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
2.

Conference Proceedings
Conference Proceedings
2. Growth of Thick AIN Layers by High Temperature CVD (HTCVD)
A. Claudel ; E. Blanquet ; D. Chaussende ; M. Audier ; D. Pique
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1269-1272,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
M. Pons ; S. Nishizawa ; P.J. Wellmann ; E. Blanquet ; D. Chaussende
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.83-88,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach
K. Ariyawong ; C. Chatillon ; E. Blanquet ; J.M. Dedulle ; D. Chaussende
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.96-99,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT
K. Ariyawong ; E. Blanquet ; J.M. Dedulle ; T. Ouisse ; D. Chaussende
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.35-38,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780