1.

Conference Proceedings
Conference Proceedings
1. RAPID ANNEALING OF IMPLANT DAMAGE USING THERMAL RADIATION
Fulks, R. T. ; Russo, C. J. ; Downey, D. F. ; Hanley, P. R. ; Stacy, W. T.
Pub. info.: Metastable materials formation by ion implantation : proceedings of the Materials Research Society annual meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A..  pp.395-400,  1982.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 7
2.

Conference Proceedings
Conference Proceedings
2. 6 Rapid thermal solid phase epitaxy annealing for ultra-shallow junction formation
Lerch, W. ; Paul, S. ; Downey, D. F. ; Arevalo, E. A.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.43-50,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
3.

Conference Proceedings
Conference Proceedings
3. The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon
Robertson, L.S. ; Brindos, R. ; Jones, K. S. ; Law, Mark E. ; Downey, D. F. ; Falk, S. ; Liu, J.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B5.8-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
4.

Conference Proceedings
Conference Proceedings
4. Simulation of Rapid Thermal Annealed Boron Ultrashallow Junctions in Inert and Oxidizing Ambient
Lerch, W. ; Gluck, M. ; Stolwijk, N. A. ; Walk, H. ; Schafer, M. ; Marcus, S. D. ; Downey, D. F. ; Chow, J. W. ; Marquardt, H.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.237-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
5.

Conference Proceedings
Conference Proceedings
5. Depth Profiles of Medium Energy Phosphorus Implants into Silicon
Lavine, J. P. ; Zheng, L. ; Whalen, P. M. ; Downey, D. F.
Pub. info.: Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.51-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 396
6.

Conference Proceedings
Conference Proceedings
6. Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants
Liu, J. ; Jones, K. S. ; Downey, D. F. ; Mehta, S.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.9-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
7.

Conference Proceedings
Conference Proceedings
7. Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation
Robertson, L. S. ; Warnes, P. N. ; Jones, K. S. ; Earles, S. K. ; Law, M. E. ; Downey, D. F. ; Falk, S. ; Liu, J.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B4.2-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610