1.

Conference Proceedings
Conference Proceedings
1. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS
Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1095-1112,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
2.

Conference Proceedings
Conference Proceedings
2. TURBULENT MELT CONVECTION AND ITS IMPLICATION ON LARGE DIAMETER SILICON CZOCHRALSKI CRYSTAL GROWTH
Seidl, A. ; Mueller, G. ; Dornberger, E. ; Tomzig, E. ; Reyer, B. ; von Ammon, W.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.417-428,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
3.

Conference Proceedings
Conference Proceedings
3. SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL
Dornberger, E. ; Esfandyari, J. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; Dupret, F. ; von Ammon, W.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.490-502,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
4.

Conference Proceedings
Conference Proceedings
4. Determination of Intrinsic Point Defect Properties in Silicon by Analyzing OSF-Ring Dynamics and Void Formation
Dornberger, E. ; Sinno, T. ; Esfandyari, J. ; Vanhellemont, J. ; Brown, R.A. ; von Ammon, W.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.170-187,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
5.

Conference Proceedings
Conference Proceedings
5. Simulation of grown-in voids in Czochralski silicon crystals
Dornberger, E. ; Esfandyari, J. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; Dupret, F. ; von Ammon, W.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.40-49,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
6.

Conference Proceedings
Conference Proceedings
6. Recent Progress in Understanding Oxygen Precipitation in Silicon
Vanhellemont, J. ; Esfandyari, J. ; Obermeier, G. ; Dornberger, E. ; Graef, D. ; Lambert, U. ; Kissinger, G.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.101-124,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
7.

Conference Proceedings
Conference Proceedings
7. DEFECTS IN SILICON CRYSTALS AND THEIR IMPACT ON TRENCH CAPACITOR DRAM DEVICE CHARACTERISTICS
Dornberger, E. ; Temmler, D. ; von Ammon, W.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.227-240,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
8.

Conference Proceedings
Conference Proceedings
8. DEFECTS IN SILICON CRYSTALS AND THEIR IMPACT ON TRENCH CAPACITOR DRAM DEVICE CHARACTERISTICS
Dornberger, E. ; Temmler, D. ; von Ammon, W.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.227-240,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
9.

Conference Proceedings
Conference Proceedings
9. Defects in silicon crystals and their impact on device characteristics
Dornberger, E. ; Temmler, D. ; von Ammon, W.
Pub. info.: Crystalline defects and contamination: their impact and control in device manufacturing III : DECON 2001 : proceedings of the Satellite Symposium to ESSDERC 2001, Nuremberg, Germany.  pp.35-50,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-29
10.

Conference Proceedings
Conference Proceedings
10. The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers
Dornberger, E. ; von Ammon, W. ; Graef, D. ; Lambert, U. ; Miller, A. ; Oelkrug, H. ; Ehlert, A.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.140-150,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13