1.

Conference Proceedings
Conference Proceedings
1. Investigation of SiO2-SiC Interrace by High-Resolution Transmission Electron Microscope
Dimitrijev, S. ; Han, J. ; Zou, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.975-978,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. SiC/SiO2 Interface States: Properties and Models
Afanas'ev, V. V. ; Ciobanu, F. ; Dimitrijev, S. ; Pensl, G. ; Stesmans, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.563-568,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient
Harrison, H. B. ; Yao, Z.-Q. ; Dimitrijev, S. ; Sweatman, D. ; Yeow, Y.-T.
Pub. info.: Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.233-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 387
4.

Conference Proceedings
Conference Proceedings
4. Effect of NO on the Electrical Characteristics of SiO2 Grown on p-Type 4H SiC
Li, H. F. ; Dimitrijev, S. ; Harrison, H. B. ; Sweatman, D. ; Tanner, P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.223-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
5.

Conference Proceedings
Conference Proceedings
5. Combined Thermal and UV Growth of Thin Dielectrics on Silicon in an NO Environment
Jamet, P. ; Tanner, P. ; Harrison, H. B. ; Dimitrijev, S.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.57-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
6.

Conference Proceedings
Conference Proceedings
6. Passivation of the Oxide/4H-SiC Interface
Jamet, P. ; Dimitrijev, S. ; Tanner, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.973-976,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Indications for Nitrogen-Assisted Removal of Carbon from SiO2-SiC Interface
Jamet, P. ; Dimitrijev, S. ; Tanner, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.655-658,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
8.

Conference Proceedings
Conference Proceedings
8. Passivation of the Oxide/4H-SiC Interface
Jamet, P. ; Dimitrijev, S. ; Tanner, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.973-976,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. The SiC-SiO2 Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material
Dimitrijev, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1263-1268,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. XPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide Ambient
Li, H. -F. ; Dimitrijev, S. ; Sweatman, D. ; Harrison, H. B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.399-402,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)