1.

Conference Proceedings
Conference Proceedings
1. Electrical and optical characterisation of defects iuduced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Deenapanray,P.N.K. ; Auret,F.D. ; Myburg,G. ; Meyer,W.E. ; Goodman,S.A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.565-570,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Electrical characterization ofelectron beam induced defects in epitaxially grown Si1-xGex
Mamor,M. ; Auret,F.D. ; Goodman,S.A. ; Myburg,G. ; Deenapanray,P.N.K. ; Meyer,W.E.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.115-120,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Electronic properties of defects introduced in n- and p-type Si1-xGex during ion etching
Goodman,S.A. ; Auret,F.D. ; Mamor,M. ; Deenapanray,P.N.K. ; Meyer,W.E.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.133-138,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures
Deenapanray,P.N.K. ; Auret,F.D. ; Myburg,G. ; Hayes,M. ; Meyer,W.E. ; Schutte,C.
Pub. info.: Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996.  pp.249-252,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 248-249
5.

Conference Proceedings
Conference Proceedings
5. Electrical characterization of defects introduced during plasma-based processing of GaAs
Auret,F.D. ; Goodman,S.A. ; Myburg,G. ; Meyer,W.E. ; Deenapanray,P.N.K. ; Murtagh,M. ; Ye,S.-R. ; Masterson,H.J. ; Beechinor,J.T. ; Crean,G.M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1045-1050,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263