1.

Conference Proceedings
Conference Proceedings
1. Inrpurity-vacancy complexes formed by electrou irradiation of Czochralski silicon
Avalos,V. ; Dannefaer,S.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.581-586,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Shallow Positron Traps in Gallium Arsenide
Dannefaer,S. ; Mascher,P. ; Kerr,D.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.893-898,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
3.

Conference Proceedings
Conference Proceedings
3. Defects in InP investigated by positron annihilation technique
Bretagnon,T. ; Dannefaer,S. ; Kerr,D.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.1021-1026,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
4.

Conference Proceedings
Conference Proceedings
4. Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon
Puff,W. ; Mascher,P. ; Kerr,D. ; Dannefaer,S.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.225-230,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
5.

Conference Proceedings
Conference Proceedings
5. Native and electron irradiation induced defects in 6H-SiC
Friessnegg,T. ; Dannefaer,S.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.721-726,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
6.

Conference Proceedings
Conference Proceedings
6. Beyond 106 Count Lifetime Spectra Using Hamamatsu Tubes and Pilot U.
Bretagnon,T. ; Abdurahman,K. ; Kerr,D. ; Dannefaer,S.
Pub. info.: Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary.  Pt.3  pp.1841-1844,  1992.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 105-110
7.

Conference Proceedings
Conference Proceedings
7. Heat-treatment induced modifications of porous silicon
Dannefaer,S. ; Wiebe,C. ; Kerr,D.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1725-1730,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
8.

Conference Proceedings
Conference Proceedings
8. Positron Annihilation in Electron Irradiated Silicon
Mascher,P. ; Dannefaer,S. ; Kerr,D.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1157-1162,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
9.

Conference Proceedings
Conference Proceedings
9. Positron Lifetime Investigations of Electron Irradiated InP
Bretagnon,T. ; Dannefaer,S. ; Kerr,D.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.299-304,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147