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Conference Proceedings

1. Improved Properties of AlON/4H SiC Interface for Passivation Studies

M. Wolborski ; D.M. Martin ; M. Bakowski ; A. Hallén ; I. Katardjiev

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.763-766, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

2. Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation

S.S. Suvanam ; D.M. Martin ; C.M. Zetterling ; A. Hallén

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.488-491, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

3. Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS

F. Li ; O. Vavasour ; M. Walker ; D.M. Martin ; Y.K. Sharma ; S.A.O. Russell ; M.R. Jennings ; A. Pérez-Tomás ; P.A. Mawby

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.151-154, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

Conference Proceedings

4. Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor

J.H. Xia ; D.M. Martin ; S.S. Suvanam ; C.M. Zetterling ; M. Östling

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.549-552, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780