1.

Conference Proceedings
Conference Proceedings
1. Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes
T. Conard ; T. Schram ; A. Akheyar ; K. Arstila ; G. Zschaetzsch ; V. Paraschiv ; W. Vandervorst ; B. Brijs ; S. De Gendt ; Z. Jiang ; V. Kaushik ; J. Lenna ; L. Ragnarsson ; D. P. Brunco
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.159-170,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
2.

Conference Proceedings
Conference Proceedings
2. Alternative Gate Dielectric Materials
S. Van Elshocht ; A. Hardy ; S. De Gendt ; C. Adelmann ; P. K. Baumann ; D. P. Brunco ; M. R. Caymax ; F. Conard ; P. Delugas ; P. Lehnen ; O. Richard ; E. Rohr ; D. Shamiryan ; A. Vos ; F. Witters ; P. Zimmerman ; M. K. Van Bael ; J. Mullens ; M. M. Meuris ; M. M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.479-498,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
3.

Conference Proceedings
Conference Proceedings
3. Current Challenges in Ge MOS Technology
A. Dimoulas ; M. Houssa ; A. Ritenour ; J. Fompeyrine ; W. Tsai ; J. Seo ; Y. Panayiotatos ; P. Tsipas ; D. P. Brunco ; M. R. Caymax ; J. Locquet ; C. Dieker
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.371-384,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)