1.

Conference Proceedings
Conference Proceedings
1. Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices
B. Lee ; D. Lichtenwalner ; M. Agustin ; R. Arghavani ; X. Tang
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.123-130,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)
2.

Conference Proceedings
Conference Proceedings
2. Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric
D. Lichtenwalner ; J. S. Jur, ; S. Novak ; V. Misra ; A. I. Kingon
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.245-252,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
3.

Conference Proceedings
Conference Proceedings
3. Towards the Fabrication of Ultra-Thin SOI on Si (001) using Epitaxial Oxide and Epitaxial Semiconductor Growth Processes
D. Lichtenwalner ; J. M. Hydrick ; V. Vankova ; V. Misra ; J. Maria ; A. I. Kingon
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.449-462,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
4.

Conference Proceedings
Conference Proceedings
4. Investigations of Work Function Shift in Lanthanum Silicate High-K Dielectric MIS Capacitors
J. S. Jur ; D. Lichtenwalner ; A. Kingon
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.149-156,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
5.

Conference Proceedings
Conference Proceedings
5. Materials and Processes for High k Gate Stacks: Results from the FEP Tzansition Center
C. Osburn ; S. Campbell ; A. Demkov ; E. Eisenbraun ; E. Garfunkel ; F. Gustafsson ; A. I. Kingon ; J. Lee ; D. Lichtenwalner ; G. Lucovsky ; T. Ma ; J. Maria ; V. Misra ; R. Nemanich ; G. Parsons ; D. Schlom ; S. Stemmer ; R. M. Wallace ; J. Whitten
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.389-416,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)