1.

Conference Proceedings
Conference Proceedings
1. Dipole Type Behavior of NO Grown Oxides on 4H-SiC
D. Haasmann ; H. Amini Moghadam ; J.S. Han ; A. Aminbeidokhti ; A. Iacopi
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.453-456,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors
H. Amini Moghadam ; S. Dimitrijev ; J.S. Han ; A. Aminbeidokhti ; D. Haasmann
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.603-606,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures
D. Haasmann ; S. Dimitrijev ; J.S. Han ; A. Iacopi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.627-630,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors
H.A. Moghadam ; S. Dimitrijev ; J.S. Han ; D. Haasmann
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.167-172,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897