1.

Conference Proceedings
Conference Proceedings
1. New Achievements on CVD Based Methods for SiC Epitaxial Growth
Crippa, D. ; Valente, G. L. ; Ruggiero, A. ; Neri, L. ; Reitano, R. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Abbagnale, G. ; Veneroni, A. ; Omarini, F. ; Zamolo, L. ; Masi, M. ; Roccaforte, F. ; Giannazzo, G. ; Franco, S. Di ; Via, F. La
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.67-72,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Optimization of Si02 Atmospheric Deposition in Continuous Belt Systems
Masi, M. ; Carra, S. ; Vaccari, G. ; Crippa, D.
Pub. info.: Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11.  pp.1167-1174,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-25
3.

Conference Proceedings
Conference Proceedings
3. SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
Leone, S. ; Mauceri, M. ; Pistone, G. ; Abbondanza, G. ; Portuese, F. ; Abagnale, G. ; Valente, G.L. ; Crippa, D. ; Barbera, M. ; Reitano, R. ; Foti, G. ; La Via, F.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.179-182,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. MOS C-t characteristics and gate oxide quality versus bulk iron contamination in epitaxial wafers
Bellutti, P. ; Collini, A. ; Zorzi, N. ; Vaccari, G. ; Crippa, D.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.209-217,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
5.

Conference Proceedings
Conference Proceedings
5. Towards the Optimization of AMT Barrel Reactors for Silicon Epitaxy
Masi, M. ; Radaelli, G. ; Roda, N. ; Raimondi, P. ; Carra, S. ; Vaccari, G. ; Crippa, D.
Pub. info.: Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A..  pp.187-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 490
6.

Conference Proceedings
Conference Proceedings
6. Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
Via, F. La ; Roccaforte, F. ; Franco, S. Di ; Ruggiero, A. ; Neri, L. ; Reitano, R. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Abbagnale, G. ; Valente, G. L. ; Crippa, D.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.429-432,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485