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15 results

Conference Proceedings

1. Silicon Carbide Power MOSFETs

Melloch, M.R. ; Cooper, J.A., Jr. ; Tan, J. ; Spitz, J.

Pub. info.:	Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX). pp.30-37, 1998. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-12

Conference Proceedings

2. High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations

Morisette, D.T. ; Cooper, J.A., Jr.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1157-1160, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Impact of Material Defects on SiC Schottky Barrier Diodes

Morisette, D.T. ; Cooper, J.A., Jr.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1133-1136, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Lu, C.-Y. ; Cooper, J.A., Jr. ; Chung, G.Y. ; Williams, J.R. ; McDonald, K. ; Feldman, L.C.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.977-980, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Demonstration of IMPATT Diode Oscillators in 4H-SiC

Yuan, L. ; Cooper, J.A., Jr. ; Webb, K.J. ; Melloch, M.R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1359-1362, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. High-Performance UMOSFETs in 4H-SiC

Li, Y. ; Cooper, J.A., Jr. ; Capano, M.A.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1191-1194, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space

Morisette, D.T. ; Cooper, J.A., Jr.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1181-1184, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Impact of Material Defects on SiC Schottky Barrier Diodes

Morisette, D.T. ; Cooper, J.A., Jr.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1133-1136, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Lu, C.-Y. ; Cooper, J.A., Jr. ; Chung, G.Y. ; Williams, J.R. ; McDonald, K. ; Feldman, L.C.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.977-980, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

Ghosh, R.N. ; Ezhilvalavan, S. ; Golding, B. ; Mukhopadhyay, S.M. ; Mahadev, N. ; Joshi, P. ; Das, M.K. ; Cooper, J.A., Jr.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

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