1.

Conference Proceedings
Conference Proceedings
1. On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C
Trauwaert,M.-A. ; Vanhellemont,J. ; Maes,H.E. ; Bavel,A.-M.Van ; Langouche,G. ; Stesmans,A. ; Clauws,P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1147-1152,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Tin Doping Effects in Silicon
Simoen,E. ; Claeys,C. ; Neimash,V.B. ; Kraitchinskii,A. ; Kras'ko,M. ; Puzenko,O. ; Blondeel,A. ; Clauws,P.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.223-235,  2000.  Pennington, N.J., Bellingham, Wash..  Electrochemical Society — SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4218
3.

Conference Proceedings
Conference Proceedings
3. Quantitative Spectroscopic Determination of Defects in Germanium
Clauws,P. ; Biondeel,A.
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices and processes : joint proceedings of the symposia on ALTECH 99, satellite symposium to ESSDERC 99, Leuven, Belgium [and] the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.99-116,  1999.  Pennington, N.J..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3895
4.

Conference Proceedings
Conference Proceedings
4. Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge
Wauters,D. ; Clauws,P.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.103-108,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IT spectroscopy
Gryse,O.De ; Clauws,P. ; Vanhellemont,J. ; Claeys,C.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.405-410,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
6.

Conference Proceedings
Conference Proceedings
6. Metastable Thermal Donor States in Germanium Identified by Far-IR Spectroscopy
Clauws,P. ; Vennik,J.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.473-480,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41