1.

Conference Proceedings
Conference Proceedings
1. Voltage Handling Capabilhy and Microwave Performance of a 4H-SiC MESFET-A Simulation Study
Khemka,V. ; Chow,T.P. ; Gutmann,R.J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.961-964,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
Ramungul,N. ; Khemka,V. ; Chow,T.P. ; Ghezzo,M. ; Kretchmer,J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1065-1068,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Beryllium-Implanted 6H-SiC P+N Junctions
Ramungul,N. ; Zheng,Y. ; Patel,R. ; Khemka,V. ; Chow,T.P.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1049-1052,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Arnold,E. ; Ramungul,N. ; Chow,T.P. ; Ghezzo,M.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1013-1016,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant
Matocha,K. ; Chow,T.P. ; Lu,H. ; Bhat,I.B.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1411-1414,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Electrical Characteristics of In Situ Grown Lateral P+N GaN Junction Diodes on Sapphire Substrates
Fedison,J.B. ; Chow,T.P. ; Lu,H. ; Bhat,I.B.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1415-1418,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
7.

Technical Paper
Technical Paper
7. Assessment of Impact of Wide Bandgap Semiconductor Devices on Performance of Power Circuits and Systems
Gupta,R. ; Ramungul,N. ; Chow,T.P. ; Torrey,D.A. ; Farkas,T.
Pub. info.: Aerospace Power Systems Conference proceedings.  pp.251-256,  1998.  Warrendale, Pa..  Society of Automotive Engineers
Title of ser.: SAE publication
Ser. no.: P-322