1.

Conference Proceedings
Conference Proceedings
1. Hydrogen-dopant interactions in III-V semiconductors
Chevallier,J. ; Pajot,B.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.539-550,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
Chevallier,J. ; Jalil,A. ; Theys,B. ; Pesant,J.C. ; Aucouturier,M. ; Rose,B. ; Kazmierski,C. ; Mircea,A.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.991-996,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
3.

Conference Proceedings
Conference Proceedings
3. Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide
Pajot,B. ; Chevallier,J. ; Theys,B. ; Rose,B.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.997-1002,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
4.

Conference Proceedings
Conference Proceedings
4. Positron Transmission Remoderation Using Bi-Layered Rectifying Foils
Jorgensen,L.V. ; Veen,A.van ; Schut,H. ; Chevallier,J.
Pub. info.: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.647-649,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 255-257
5.

Conference Proceedings
Conference Proceedings
5. Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
Machayekhi,B. ; Rahbi,R. ; Theys,B. ; Miloche,M. ; Chevallier,J.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.951-955,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
6.

Conference Proceedings
Conference Proceedings
6. Deuterium Effusion from InP
Theys,B. ; Chevallier,J. ; Miloche,M. ; Rose,B.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.945-950,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
7.

Conference Proceedings
Conference Proceedings
7. Hydrogen Diffusion in Compound Semiconductors
Chevallier,J.
Pub. info.: Hydrogen in compound semiconductors.  pp.219-250,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 148-149
8.

Conference Proceedings
Conference Proceedings
8. Hydrogen in InAs on GaAs heteroctructures:diffusion behavior,electrical and optical effects
Theys,B. ; Kalem,S. ; Lusson,A. ; Chevallier,J. ; Grattepain,C. ; Stutzrnann,M.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.629-634,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87