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17 results

Conference Proceedings

1. *INTERFACE STRUCTURE AND LAYER SYNTHESIS MODES IN MESOTAXIAL Si/CoSi2/Si STRUCTURES

Hull, R. ; Hsieh, Y. F. ; Short, K. T. ; White, A. E ; Cherns, D.

Pub. info.:	High resolution electron microscopy of defects in materials : symposium held April 16-18, 1990, San Francisco, California, USA. pp.91-104, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	183

Conference Proceedings

2. *IN-SITU TRANSMISSION ELECTRON MICROSCOPY OF THE FORMATION OF METAL-SEMICONDUCTOR CONTACTS

Gibson, J. M. ; Loretto, D. ; Cherns, D.

Pub. info.:	Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.. pp.91-96, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	181

Conference Proceedings

3. DIFFRACTION STUDIES OF METAL-SEMICONDUCTOR INTERFACES

Cherns, D. ; Kiely, C.J. ; Eaglesham, D.J.

Pub. info.:	Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.. pp.145-150, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	56

Conference Proceedings

4. COMPOSITION PROFILES IN Al GaAs/GaAs AND InGaAs/InP STRUCTURES EXAMINED BY CONVERGENT BEAM ELECTRON DIFFRACTION

Cherns, D. ; Jordan, I.K. ; Vincent, R.

Pub. info.:	Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A.. pp.431-436, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	138

Conference Proceedings

5. *THE ROLE OF MISFIT DISLOCATIONS DURING EPITAXIAL GROWTH

Cherns, D.

Pub. info.:	Initial stages of epitaxial growth : symposium held April 22-24, 1987, Anaheim, California, U.S.A.. pp.99-110, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	94

Conference Proceedings

6. Nanopipes and Inversion Domains in High-Quality GaN Epitaxial Layers

Ponce, F. A. ; Young, W. T. ; Cherns, D. ; Steeds, J. W. ; Nakamura, S.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.405-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

7. Microstructure of InGaN Quantum Wells

Ponce, F. A. ; Cherns, D. ; Goetz, W. ; Kern, R. S.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.453-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

8. Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers

Liliental-Weber, Z. ; Jasinski, J. ; Cherns, D. ; Baines, M. ; Davis, R.

Pub. info.:	GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.. pp.309-316, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	693

Conference Proceedings

9. Distinct Magnesium Incorporation Behavior in Laterally Grown AlGaN

Liu, R. ; Bell, A. ; Ponce, F.A. ; Cherns, D. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.27-34, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

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Conference Proceedings

10. Platelet Inversion Domains Induced by Mg-Doping in ELOG AlGaN Films

Liu, R. ; Ponce, F.A. ; Cherns, D. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.765-770, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

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