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Conference Proceedings

1. Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases

Chen, J. C. ; Huang, Z. C. ; Yang, Bing ; Chen, H. K. ; Lee, K. J.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.153-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

Conference Proceedings

2. Very Low Deep Level AlxGa1-xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition

Huang, Z. C. ; Yang, Bing ; Chen, H. K. ; Chen, J. C.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.195-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

Conference Proceedings

3. Low Deep Impurity InxGa1-xP Grown by Metalorganic Chemical Vapor Deposition

Huang, Z. C. ; Yang, Bing ; Chen, H. K. ; Chen, J. C.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.189-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378