1.

Conference Proceedings
Conference Proceedings
1. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
Isoird, K. ; Lazar, M. ; Locatelli, M.-L. ; Raynaud, C. ; Planson, D. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1289-1292,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
Tournier, D. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Chante, J.P. ; Sarrus, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1403-1406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Realization of a High-Current and Low RON 600V Current-Limiting Device
Nallet, F. ; Godignon, P. ; Planson, D. ; Raynaud, C. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1247-1250,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter
Tournier, D. ; Godignon, P. ; Planson, D. ; Chante, J.P. ; Sarrus, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1243-1246,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Lazar, M. ; Ottaviani, L. ; Locatelli, M.L. ; Raynaud, C. ; Planson, D. ; Morvan, E. ; Godignon, P. ; Skorupa, W. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.571-574,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
7.

Conference Proceedings
Conference Proceedings
7. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
Tournier, D. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Chante, J.P. ; Sarrus, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1403-1406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. SiC Power Devices on QUASIC and SiCOI Smart-CutR Substrates: First Demonstrations
Letertre, F. ; Daval, N. ; Templier, F. ; Bano, E. ; Planson, D. ; Di Cioccio, L. ; Jalaguier, E. ; Bluet, J.M. ; Billon, T. ; Madar, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.813-818,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Tournier, D. ; Godignon, Ph. ; Montserrat, J. ; Planson, D. ; Raynaud, C. ; Lazar, M. ; Chante, J.P. ; Sarrus, F. ; Bonhomme, C. ; de Palma, J.F.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.871-874,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436