1.

Conference Proceedings
Conference Proceedings
1. A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
Brosselard, P. ; Bouchet, T. ; Planson, D. ; Scharnholz, S. ; Paques, G. ; Lazar, M. ; Raynaud, C. ; Chante, J. P. ; Spahn, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.1005-1008,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation
Lazar, M. ; Ottaviani, L. ; Locatelli, M. L. ; Planson, D. ; Canut, B. ; Chante, J. P.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.921-924,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. 6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
Badila, M. ; Brezeanu, G. ; Chante, J. P. ; Locatelli, M. -L. ; Millan, J. ; Godignon, P. ; Lebedev, A. ; Lungu, P. ; Banu, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1355-1358,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth
Lazar, M. ; Jacquier, C. ; Dubois, C. ; Raynaud, C. ; Ferro, G. ; Planson, D. ; Brosselard, P. ; Monteil, Y. ; Chante, J. P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.633-636,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation
Isoird, K. ; Ottaviani, L. ; Locatelli, M. L. ; Planson, D. ; Raynaud, C. ; Bevilacqua, P. ; Chante, J. P.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1363-1366,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
6.

Conference Proceedings
Conference Proceedings
6. 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage
Brezeanu, G. ; Badila, M. ; Millan, J. ; Godignon, P. ; Locatelli, M. L. ; Chante, J. P. ; Lebedev, A. ; Banu, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1219-1222,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)