1.

Conference Proceedings
Conference Proceedings
1. Inherently Safe Resonant Reset Fotward Converter Using a Bias-Enhanced SiC JFET
Kelley, R.L. ; Brignac, T. ; Mazzola, M.S. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1211-1214,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. SiC Smart Power JFET Technology for High-Temperature Applications
Sankin, I. ; Bondarenko, V. ; Kelley, R.L. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1207-1210,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation
Matocha, K.S. ; Kaminsky, E. ; Vertiatchikh, A. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1239-1242,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Highly Uniform SiC Epitaxy for MESFET Fabrication
Zhang, J. ; Mazzola, J. ; Hoff, C. ; Rivas, C. ; Romano, E. ; Casady, J.R.B. ; Mazzola, M.S. ; Casady, J.B. ; Matocha, K.S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.195-198,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
Los, A.V. ; Mazzola, M.S. ; Kajfez, D. ; McDaniel, B.T. ; Smith, C.E. ; Kretchmer, J. ; Rowland, L.B. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1193-1196,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. A Review of SiC Power Switch: Achievements, Difficulties and Perspectives
Sankin, I. ; Merrett, J.N. ; Draper, W.A. ; Casady, J.R.B. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1249-1252,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination
Sankin, I. ; Dufrene, J.B. ; Merrett, J.N. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.879-882,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
8.

Conference Proceedings
Conference Proceedings
8. Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
Mazzola, M.S. ; Casady, J.B. ; Merrett, N. ; Sankin, I. ; Draper, W. ; Seale, D. ; Bondarenko, V. ; Koshka, Y. ; Gafford, J. ; Kelley, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1153-1156,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
9.

Conference Proceedings
Conference Proceedings
9. Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
Merrett, J.N. ; Scofield, J.D. ; Tsao, B.H. ; Mazzola, M. ; Seale, D. ; Draper, W.A. ; Sankin, I. ; Casady, J.B. ; Bondarenko, V.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.921-924,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
Sankin, I. ; Draper, W.A. ; Merrett, J.N. ; Casady, J.R.B. ; Casady, J.B.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1101-1104,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460