1.

Conference Proceedings
Conference Proceedings
1. Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
Wang, X.W. ; Bu, H.M. ; Laube, B.L. ; Caragianis-Broadbridge, C. ; Ma, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.993-996,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Microstructure And Electronic Properties Of Thin Film Nanoporous Silica As A Function Of Processing And Annealing Methods
Caragianis-Broadbridge, C. ; Miecznikowski, J.R. ; Zhu, W. ; Luo, Z. ; Han, J. ; Lehman, A. Hein
Pub. info.: Materials, technology and reliability for advanced interconnects and low-k dielectrics : symposium held April 23-27, 2000, San Francisco, California, U.S.A..  pp.D5.16-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 612
3.

Conference Proceedings
Conference Proceedings
3. Preparation, Microstructure and Physical Characteristics of Ferroelectric Pb5Ge3O11 Thin Films for Memory Application
Liu, Y. X. ; Caragianis-Broadbridge, C. ; Lehman, A. H. ; McGuinness, J. ; Ma, T. P.
Pub. info.: Ferroelectric thin films XII : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.213-218,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 784
4.

Conference Proceedings
Conference Proceedings
4. Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
Wang, X.W. ; Bu, H.M. ; Laube, B.L. ; Caragianis-Broadbridge, C. ; Ma, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.993-996,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393