1.

Conference Proceedings
Conference Proceedings
1. Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption
H. Hamad ; C. Raynaud ; P. Bevilacqua ; S. Scharnholz ; B. Vergne
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.245-248,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements
M. Lazar ; F. Jomard ; D.M. Nguyen ; C. Raynaud ; G. Pâques
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.885-888,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection
D.M. Nguyen ; G. Pâques ; N. Dheilly ; C. Raynaud ; D. Tournier
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.567-570,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
H. Vang ; S. Scharnholz ; C. Raynaud ; M. Lazar ; G. Pâques
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1011-1014,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Process Optimization for High Temperature SiC Lateral Devices
M. Soueidan ; M. Lazar ; D.M. Nguyen ; D. Tournier ; C. Raynaud
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.585-588,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
6.

Conference Proceedings
Conference Proceedings
6. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
C. Raynaud ; D.M. Nguyen ; P. Brosselard ; A. Pérez-Tomás ; D. Planson
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.671-674,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
S. Diaham ; M.L. Locatelli ; T. Lebey ; C. Raynaud ; M. Lazar
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.695-698,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
T. Ben Salah ; S. Risaletto ; C. Raynaud ; K. Besbes ; D. Bergogne
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1031-1034,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
D.M. Nguyen ; C. Raynaud ; M. Lazar ; G. Pâques ; S. Scharnholz
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.545-548,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
10.

Conference Proceedings
Conference Proceedings
10. Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
H. Hamad ; C. Raynaud ; P. Bevilacqua ; S. Scharnholz ; D. Planson
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.223-228,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823