1.

Conference Proceedings
Conference Proceedings
1. Does Strain Engineering Impact the Gate Stack Quality and Reliability?
C. Claeys ; E. Simoen ; F. Crupi ; G. Giusi
Pub. info.: ULSI process integration 5.  pp.101-114,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(6)
2.

Conference Proceedings
Conference Proceedings
2. Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point
L.M. Camillo ; J.A. Martino ; E. Simoen ; C. Claeys
Pub. info.: Microelectonics Technology and Devices - SBMicro 2008.  pp.243-252,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 14(1)
3.

Conference Proceedings
Conference Proceedings
3. Origin and Suppression of Junction Leakage in Germanium-On-Silicon Structures
C. Claeys ; S. Sonde ; E. Simoen ; A. Satta ; B. De Jaeger ; G. Nicolas ; M. Meuris
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.31-40,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
4.

Conference Proceedings
Conference Proceedings
4. High-k Gate Stack Engineering and Low Frequency Noise Performance
C. Claeys ; E. Simoen ; P. Srinivasan ; D. Misra
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.287-300,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)
5.

Conference Proceedings
Conference Proceedings
5. Relaxation-Induced Excess Leakage Current in Recessed Si₁₋xGex Source/Drain Junctions
M. B. Gonzalez ; M. Chowdhury ; N. Bhouri ; P. Verheyen ; F. Leys ; O. Richard ; R. Loo ; C. Claeys ; B. Simoen ; V. Machkaoutsan ; P. Tomasini ; S. Thomas ; J. Lu ; J. Weijtmans ; R. Wise
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.389-396,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
6.

Conference Proceedings
Conference Proceedings
6. Low Temperature Operation of Undoped Body Triple-Gate FinFETs from an Analog Perspective
M. A. Pavanello ; J. A. Martino ; E. Simoen ; R. Rooyackers ; N. Collaert ; C. Claeys
Pub. info.: Microelectronics Technology and Devices : SBMICRO 2007.  pp.19-28,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 9(1)
7.

Conference Proceedings
Conference Proceedings
7. Influence of the N-Type FinFET Width on the Zero Temperature Coefficient
M. Bellodi ; J. A. Martino ; L. M. Camiio ; E. Simoen ; C. Claeys
Pub. info.: Microelectronics Technology and Devices : SBMICRO 2007.  pp.29-36,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 9(1)
8.

Conference Proceedings
Conference Proceedings
8. Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs
M. Galeti ; J. A. Martino ; E. Simoen ; C. Claeys
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.387-392,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
9.

Conference Proceedings
Conference Proceedings
9. Temperature Influences on FinFETs with Undoped Body
M. A. Pavanello ; J. A. Martino ; E. Simoen ; R. Rocyackers ; N. Collaert ; C. Claeys
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.211-216,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
10.

Conference Proceedings
Conference Proceedings
10. Simple Analytical Model to Study the ZTC Bias Point in FinFETs
M. Bellodi ; L. Camillo ; J. A. Martino ; E. Simoen ; C. Claeys
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.205-210,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)