1.

Conference Proceedings
Conference Proceedings
1. Room Temperature Photoluminescence Linewidth versus Material Quality of GaN
Monemar,B. ; Buyanova,I.A. ; Bergman,J.P. ; Amano,H. ; Akasaki,I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1319-1322,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. SF6/O2 and CF4/O2 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy:Role of Oxygen
Buyanova,I.A. ; Henry,A. ; Monemar,B. ; Lindstrom,J.L. ; Sheinkman,M.K. ; Oehrlein,G.S.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1807-1812,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. The role of non-radiative defects in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy
Buyanova,I.A. ; Chen,W.M. ; Pozina,G. ; Monemar,B. ; Ni,W.X. ; Hansson,G.V.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.139-144,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Intrinsic modulation doping in InP-based heterostructures.(Invited)
Chen,W.M. ; Buyanova,I.A. ; Bi,W.G. ; Tu,C.W.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.805-812,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
Buyanova,I.A. ; Ostapenko,S.S. ; Savchuk,A.U. ; Sheinkman,M.K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.1063-1068,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
6.

Conference Proceedings
Conference Proceedings
6. Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures
Chen,W.M. ; Buyanova,I.A. ; Henry,A. ; Ni,W.-X. ; Hansson,G.V. ; Monemar,B.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.473-478,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
7.

Conference Proceedings
Conference Proceedings
7. Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers
Buyanova,I.A. ; Chen,W.M. ; Henry,A. ; Ni,W.X. ; Hansson,G.V. ; Monemar,B.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.479-484,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201