1.

Conference Proceedings
Conference Proceedings
1. Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
Wang, X.W. ; Bu, H.M. ; Laube, B.L. ; Caragianis-Broadbridge, C. ; Ma, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.993-996,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. High-Frequency Capacitance-Voltage Characteristics of PECVD-Grown SiO2 MIS Structure on GaN and GaN/Al0.4Ga0.6N/GaN Heterostructure
Chen, P. ; Zhou, Y.G. ; Bu, H.M. ; Li, W.P. ; Chen, Z.Z. ; Shen, B. ; Zhang, R. ; Zheng, Y.D.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
3.

Conference Proceedings
Conference Proceedings
3. Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
Wang, X.W. ; Bu, H.M. ; Laube, B.L. ; Caragianis-Broadbridge, C. ; Ma, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.993-996,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393