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Conference Proceedings

1. *SCANNING TUNNELING MICROSCOPY STUDIES OF GaAs HETEROEPITAXIAL GROWTH ON Si

Biegelsen, D. K. ; Bringans, R. D. ; Northrup, J. E. ; Swartz, L. E.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.359-370, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

2. INTERFACE FORMATION AND THE HEREROEPITAXY OF ZnSe ON Si

Bringans, R. D. ; Biegelsen, D. K. ; Ponce, F. A. ; Swartz, L.-E. ; Tramontana, J. C.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.195-200, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

3. Thin Films on Semiconductors

Bringans, R. D.

Pub. info.:	Angle-resolved photoemission : theory and current applications. pp.435-, 1992. Amsterdam. Elsevier
Title of ser.:	Studies in surface science and catalysis
Ser. no.:	74

Conference Proceedings

4. GaAs-ON-Si EPITAXY: RESULTS FOR COVERAGE OF - 1 MONOLAYER

Bringans, R. D. ; Olmstead, M. A. ; Uhrberg, R. I. G. ; Bachrach, R. Z.

Pub. info.:	Initial stages of epitaxial growth : symposium held April 22-24, 1987, Anaheim, California, U.S.A.. pp.201-206, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	94

Conference Proceedings

5. BONDING AT THE CaF2-ON-Si (111) INTERFACE

Olmstead, M. A. ; Bringans, R. D. ; Uhrberg, R. I. G. ; Bachrach, R. Z.

Pub. info.:	Initial stages of epitaxial growth : symposium held April 22-24, 1987, Anaheim, California, U.S.A.. pp.195-200, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	94

Conference Proceedings

6. SILICON SURFACE PASSIVATION FOR HETEROEPITAXY BY HYDROGEN TERMINATION

Fenner, d. B. ; Biegelsen, D. K. ; Bringans, R. D. ; Krusor, B. S.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.279-284, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

7. OMVPE GROWTH OF MATERIALS FOR RED LASER DIODES

Bour, D. P. ; Treat, D. W. ; Bringans, R. D. ; Geels, R. S. ; Welch, D. F.

Pub. info.:	Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.. pp.45-, 1994. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	326

Conference Proceedings

8. Characterization of OMVPE-Grown AlGaInN Heterostructures

Bour, D. P. ; Chung, H. F. ; Gotz, W. ; Romano, L. ; Krusor, B. S. ; Hofstetter, D. ; Rudaz, S. ; Kuo, C. P. ; Ponce, F. A. ; Johnson, N. M. ; Craford, M. G. ; Bringans, R. D.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.509-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

9. Application of Blue Diode Lasers to Printing

Bringans, R. D.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1203-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

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Conference Proceedings

10. THREADING DISLOCATION DENSITIES IN GaAs GROWN ON REDUCED AREA Si SUBSTRATES

Knall, J. ; Romano, L. T. ; Biegelsen, D. K. ; Bringans, R. D.

Pub. info.:	Thin films : stresses and mechanical properties IV : symposium held April 12-16, 1993, San Francisco, California, U.S.A.. pp.417-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	308

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