1.

Conference Proceedings
Conference Proceedings
1. Performance of SiC Cascode Switches with Si MOS Gate
Brezeanu, G. ; Boianceanu, C. ; Brezeanu, M. ; Mihaila, A. ; Udrea, F. ; Amaratunga, G.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.825-828,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics
Brezeanu, M. ; Badila, M. ; Brezeanu, G. ; Udrea, F. ; Boianceanu, C. ; Amaratunga, G.A.J. ; Zekentes, K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1087-1090,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
Brezeanu, G. ; Badila, M. ; Godignon, P. ; Millan, J. ; Udrea, F. ; Mihaila, A. ; Amaratunga, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1301-1304,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices
Mihaila, A. ; Udrea, F. ; Brezeanu, G. ; Azar, R. ; Amaratunga, G.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.723-726,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
5.

Conference Proceedings
Conference Proceedings
5. Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches
Mihaila, A. ; Udrea, F. ; Azar, R. ; Brezeanu, G. ; Amaratunga, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1239-1242,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. 6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
Badila, M. ; Brezeanu, G. ; Chante, J. P. ; Locatelli, M. -L. ; Millan, J. ; Godignon, P. ; Lebedev, A. ; Lungu, P. ; Banu, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1355-1358,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage
Brezeanu, G. ; Badila, M. ; Millan, J. ; Godignon, P. ; Locatelli, M. L. ; Chante, J. P. ; Lebedev, A. ; Banu, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1219-1222,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
Mihaila, A. ; Udrea, F. ; Godignon, P. ; Trajkovic, T. ; Brezeanu, G. ; Rebollo, J. ; Millan, J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.891-894,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
Brezeanu, G. ; Badila, M. ; Godignon, P. ; Millan, J. ; Udrea, F. ; Mihaila, A. ; Amaratunga, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1301-1304,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination
Brezeanu, G. ; Godignon, P. ; Dimitrova, E. ; Raynaud, C. ; Planson, D. ; Mihaila, A. ; Udrea, F. ; Millan, J. ; Amaratunga, G. ; Boianceanu, C.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1495-1498,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460