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11 results

Conference Proceedings

1. Energy levels associated with the metastable state of EL2

Stievenard,D. ; Delerue,C. ; Bremond,G. ; Guillot,G. ; Azoulay,R. ; Bardeleben,H.J.von ; Bourgoin,J.C. ; Portal,J.C. ; Ranz,E.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.911-916, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

2. Fast Neutron Irradiation Induced Defects in High Purity Germanium

Fourches,N. ; Huck,A. ; Walter,G. ; Bourgoin,J.C.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part3 pp.1233-1238, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

3. Recombination centers in electron irradiated Si and GaAs

Bourgoin,J.C. ; Zazoui,M. ; Zaidi,M.A.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.629-634, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

4. Defects in Electron Irradiated GaP and GaInP

Zaidi,M.A. ; Maaref,H. ; Zazoui,M. ; Bourgoin,J.C.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.295-298, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

5. Detection and identification of the EL2 metastable state in GaAs

Bourgoin,J.C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.993-996, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

6. Defects in thick epitaxial GaAs layers

Samic,H. ; Bourgoin,J.C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.997-1002, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

7. Electrical properties of low temperature grown GaAs

Stellmacher,M. ; Nagle,J. ; Khirouni,K. ; Bourgoin,J.C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.929-932, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

8. Detection Of Defects Responsible for Lifetime in p-Type Si

Zazoui,M. ; Bourgoin,J.C. ; Stievenard,D. ; Deresmes,D.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.189-194, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. Defect Induced Electron Transport through Semiconductor Barriers

Bourgoin,J.C. ; Mir,L.El

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.437-442, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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Conference Proceedings

10. The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs

Bardeleben,H.J.von ; Bourgoin,J.C. ; Stievenard,D.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part1 pp.97-100, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

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