1.

Conference Proceedings
Conference Proceedings
1. STUDY OF SPATIAL AND ENERGETICAL BEHAVIOR OF SLOW Si--SiO2 INTERFACE STATES BY TUNNEL-DLTS UNDER FOWLER-NORDHEIM STRESS
Vuillaume, D. ; Lakhdari, H. ; Bourgoin, J. C. ; Bouchakour, R. ; Jourdain, M.
Pub. info.: SiO[2] and its interfaces : symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A..  pp.235-240,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 105
2.

Conference Proceedings
Conference Proceedings
2. BISTABLE DEFECTS INDUCED IN GaAs BY H2 PLASMA PROCESS
Boddaert, X ; Vuillaume, D. ; Stievenard, D. ; Bourgoin, J. C. ; Boher, P.
Pub. info.: Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A..  pp.425-430,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 146
3.

Conference Proceedings
Conference Proceedings
3. POINT DEFECTS, DISLOCATIONS IN GaAs AND MATERIAL HOMOGENEITY
Bourgoin, J. C. ; von Bardeleben, H. J. ; Lim, H. ; Stievenard, D.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.411-414,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
4.

Conference Proceedings
Conference Proceedings
4. DX CENTER IN GaAs-GaA1As SUPERLATTICES SUPPRESSION AND IDENTIFICATION
Feng, S. L. ; Bourgoin, J. C. ; Bardeleben, von H. J. ; Barbier, E. ; Hirtz, J. P. ; Mollot, F.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.433-438,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
5.

Conference Proceedings
Conference Proceedings
5. Charge collection in epitaxial GaAs p/i/n radiation detectors
Bourgoin, J. C. ; Sun, G. C. ; Sellin, P. J. ; Yin, S.
Pub. info.: Hard X-ray and gamma-ray detector physics V : 4-5 August, 2003, San Diego, California.  pp.150-153,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5198
6.

Conference Proceedings
Conference Proceedings
6. COMPARISON BETWEEN THERMAN AND LASER ANNEALING IN ION-EMPLANTED SILICON
Blosse, A. ; Bourgoin, J. C.
Pub. info.: Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.535-540,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 14
7.

Conference Proceedings
Conference Proceedings
7. dc Current-Voltage Characteristics and Admittance Spectroscopy of an Al-Porous Si Barrier
Khirouni, K. ; Bourgoin, J. C. ; Borgi, K. ; Maaref, H. ; Deresmes, D. ; Stievenard, D.
Pub. info.: Advances in microcrystalline and nanocrystalline semiconductors, 1996 : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.619-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 452