1.

Conference Proceedings
Conference Proceedings
1. WITH WAFERS WITH NITROGEN DOPED SUBSTRATES AND THEIR GETTERING BEHAVIOR
Sebmolke, R. ; Blietz, M. ; Hoelzl, R. ; Menzel, D. ; Bender, H.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.658-669,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
2.

Conference Proceedings
Conference Proceedings
2. INVITED: GETTERING EFFICIENCIES AND THEIR DEPENDENCE ON MATERIAL PARAMETERS AND THERMAL PROCESS: HOW CAN THIS BE MODELED?
HoeIzl, R. ; Blietz, M. ; Fabry, L. ; Schmolke, R.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.608-625,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
3.

Conference Proceedings
Conference Proceedings
3. Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH!*
Schmolke, R. ; Blietz, M. ; Schauer, R. ; Zemke, D. ; Oelkrug, H. ; Ammon, W.v. ; Lambert, U. ; Grtlf, D.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.3-18,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
4.

Conference Proceedings
Conference Proceedings
4. Influence of Boron Doping on Oxide Precipitate Nucleation and Gettering of Iron Impurities in Low Thermal Budget Processing of Czochralski Silicon
Kissinger, G. ; Vanhellemont, J. ; Morgenstern, G. ; Blietz, M. ; Tittelbach-Helmrich, K. ; Obermejer, G. ; Wahlich, R.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.268-279,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
5.

Conference Proceedings
Conference Proceedings
5. INVITED: GETTERING EFFICIENCIES AND THEIR DEPENDENCE ON MATERIAL PARAMETERS AND THERMAL PROCESS: HOW CAN THIS BE MODELED?
HoeIzl, R. ; Blietz, M. ; Fabry, L. ; Schmolke, R.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.608-625,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
6.

Conference Proceedings
Conference Proceedings
6. BULK MICRO DEFECTS OF P/P- EPITAXIAL SILICON WITH WAFERS WITH NITROGEN DOPED SUBSTRATES AND THEIR GETTERING BEHAVIOR
Schmolke, R. ; Blietz, M. ; Hoelzl, R. ; Menzel, D. ; Bender, H.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.658-669,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2