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15 results

Conference Proceedings

1. Studies on Selective Growth and In Situ Etchitlg of 4H-SiC Using a TaC Mask

Li, C.H. ; Bhat, I.B. ; Chow, T.P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.259-262, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. IN-SITU SPECTROSCOPIC ELLIPSOMETRY APPLIED TO ZnSe AND ZnCdSe GROWTH PROCESS IN ORGANOMETALLIC VAPOR PHASE EPITAXY

Iacoponi, J. ; Bhat, I.B. ; Johs, B. ; Woollam, J.A.

Pub. info.:	Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.237-242, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	242

Conference Proceedings

3. INFRA-RED PHOTODIODES IN Hg1-xCdxTe GROWN BY OMVPE

Parat, K.K. ; Tashar, N.R. ; Ehsani, H. ; Bhat, I.B. ; Ghandhi, S.K.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.87-92, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

4. Overlapping Shockley/Frank Faults in 4F-SiC PiN Diodes

Twigg, M.E. ; Stahlbush, R.E. ; Losee, P.A. ; Li, C.H. ; Bhat, I.B. ; Chow, T.P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.383-386, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration

Rao, S. ; Chow, T.P. ; Bhat, I.B.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.597-600, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

Yan, F. ; Devaty, R.P. ; Choyke, W.J. ; Gali, A. ; Bhat, I.B. ; Larkin, D.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.585-588, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

Losee, P.A. ; Li, C.H. ; Kumar, R.J. ; Chow, T.P. ; Bhat, I.B. ; Gutmann, R.J. ; Stahlbush, R.E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1363-1366, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

8. Progress of multicolor single detector to detector array development for remote sensing

Abedin, M.N. ; Refaat, T.F. ; Bhat, I.B. ; Xiao, Y. ; Bandara, S.V. ; Gunapala, S.D.

Pub. info.:	Infrared spaceborne remote sensing XII : 2-3 August 2004, Denver, Colorado, USA. pp.239-247, 2004. Bellingham, Wash., USA. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5543

Conference Proceedings

9. CHARACTERISTIC OF ZnSe LAYERS GROWN ON Zn-STABILIZED AND Se-STABILIZED GaAs SUBSTRATES

Akram, S. ; Ehsani, H. ; Bhat, I.B. ; Ghandhi, S.K.

Pub. info.:	Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.261-272, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	242

10.

Conference Proceedings

10. THE EFFECT OF SURFACE LAYERS IN EPITAXIAL n-TYUPE Hg1-xCdxTe

Parat, K.K. ; Taskar, N.R. ; Bhat, I.B. ; Ghandi, S.K.

Pub. info.:	Properties of II-VI semiconductors : bulk crystals, epitaxial films, quantum well structures, and dilute magnetic systems : symposium held November 27-December 2, 1989, Boston, Massachusetts, U.S.A.. pp.271-276, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	161

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Author: Bhat, I.B.