1.

Conference Proceedings
Conference Proceedings
1. MOVPE of GaSb/InGaAsSb multilayers and fabrication of dual band photodetectors [5881-01]
Xiao, Y. ; Bhat, I. ; Refaat, T. F. ; Abedin, M. N. ; Shao, Q.
Pub. info.: Infrared and photoelectronic imagers and detector devices : 31 July - 1 August 2005, San Diego, California, USA.  pp.588101-588101,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5881
2.

Conference Proceedings
Conference Proceedings
2. Performance dependences On multiplication layer thickness for InP/lnGaAs avalanche photodiodes based on time domain modeling [5881-25]
Xiao, Y. ; Bhat, I. ; Abedin, M. N.
Pub. info.: Infrared and photoelectronic imagers and detector devices : 31 July - 1 August 2005, San Diego, California, USA.  pp.58810R-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5881
3.

Conference Proceedings
Conference Proceedings
3. Characterization of dual-band infrared detectors for application to remote sensing [5883-08]
Abedin, M. N. ; Refaat, T. F. ; Xiao, Y. ; Bhat, I.
Pub. info.: Infrared spaceborne remote sensing 2005 : 3-4 August 2005, San Diego, California, USA.  pp.588307-,  2005.  Bellingham, Wash., USA.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5883
4.

Conference Proceedings
Conference Proceedings
4. Eptiaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
Schowalter, L. J. ; Shusterman, Y. ; Wang, R. ; Bhat, I. ; Arunmozhi, G. ; Slack, G. A.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.76.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. Electrical Characterization of Magnesium-Doped Gallium Nitride Grown by Metalorganic Vapor Phase Epitaxy
Huang, J. W. ; Lu, H. ; Cederberg, J. G. ; Bhat, I. ; Kuech, T. F.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.601-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
6.

Conference Proceedings
Conference Proceedings
6. Electrostatic Force Microscopy and Secondary Electron Imaging of Double Stacking Faults in Heavily n-Type 4H-SiC After Oxidation
Mikhov, M.K. ; Skromme, B.J. ; Wang, R. ; Li, C. ; Bhat, I.
Pub. info.: Progress in compound semiconductor materials -- electronic and optoelectronic applications.  pp.139-144,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 799
7.

Conference Proceedings
Conference Proceedings
7. GROWTH AND CHARACTERIZATION OF CdTe LAYERS On InSb SUBSTRATES PREPARED BY ORGANOMETALLIC EPITAXY
Bhat, I. ; Sundaram, L. M. G. ; Borrego, J. M. ; Gandhi, S. K.
Pub. info.: Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A..  pp.115-120,  1985.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 37
8.

Conference Proceedings
Conference Proceedings
8. Multicolor focal plane array detector technology: a review
Abedin, M.N. ; Refaat, T.F. ; Zawodny, J.M. ; Sandford, S.P. ; Singh, U.N. ; Bandara, S.V. ; Gunapala, S.D. ; Bhat, I. ; Barnes, N.P.
Pub. info.: Infrared spaceborne remote sensing XI : 6-8 August 2003, San Diego, California, USA.  pp.279-288,  2003.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5152
9.

Conference Proceedings
Conference Proceedings
9. Characteristics of Trench-Refilled 4h-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
Li, C. ; Losee, P. ; Seiler, J. ; Bhat, I. ; Chow, T. P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.159-162,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
Skromme, B.J. ; Mikhov, M.K. ; Chen, L. ; Samson, G. ; Wang, R. ; Li, C. ; Bhat, I.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.581-584,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460