1.

Conference Proceedings
Conference Proceedings
1. On the origin of yellow donor-acceptor pair emission iu GaN
Godlewski,M. ; Ivanov,V.Yu. ; Kaminska,A. ; Zuo,H.Y. ; Goldys,E.M. ; Tansley,T.L. ; Barski,A. ; Rossner,U. ; Rouvicre,J.L. ; Arlery,M. ; Grzegory,I. ; Suski,T. ; Porowski,S. ; Bergman,J.P.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1149-1154,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures
Monemar,B. ; Bergman,J.P. ; Pozina,G. ; Dalfors,J. ; Sernelius,B.E. ; Holtz,P.O. ; Amano,H. ; Akasaki,I.
Pub. info.: Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California.  pp.168-178,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3624
3.

Conference Proceedings
Conference Proceedings
3. Room Temperature Photoluminescence Linewidth versus Material Quality of GaN
Monemar,B. ; Buyanova,I.A. ; Bergman,J.P. ; Amano,H. ; Akasaki,I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1319-1322,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon(100)Substrates
Godlewski,M. ; Ivanov,V.Yu. ; Bergman,J.P. ; Monemar,B. ; Barski,A. ; Langer,R.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1343-1346,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Exciton Dynamics in Homoepitaxial GaN
Monemar,B. ; Bergman,J.P. ; Ivanov,I.G. ; Baranowski,J.M. ; Pakula,K. ; Grzegory,I. ; Porowski,S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1275-1278,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Time Resolved PL Study of Multi Bound Excitons in 3C SiC
Bergman,J.P. ; Janzen,E. ; Sridhara,S.G. ; Choyke,W.J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.485-488,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
7.

Conference Proceedings
Conference Proceedings
7. Photoluminescenee dynamics in the near bandgap region of homoepitaxial GaN layers
Korona,K.P. ; Bergman,J.P. ; Monemar,B. ; Baranowski,J.M. ; Pakula,K. ; Grzegory,I. ; Porowski,S.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1125-1130,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
8.

Conference Proceedings
Conference Proceedings
8. Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
Monemar,B. ; Holtz,P.O. ; Harris,C.I. ; Bergman,J.P. ; Kalt,H. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C. ; Kohler,K. ; Schweizer,T.
Pub. info.: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.29-36,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 117-118
9.

Conference Proceedings
Conference Proceedings
9. Auger type nonradiative recombination processes in bulk and quantum well structures of II-VI semiconductors containing transition metal ions
Godlewski,M. ; Surma,M. ; Zakrewski,A.J. ; Wojtowicz,T. ; Karczewski,G. ; Kossut,J. ; Bergman,J.P. ; Monemar,B.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1677-1682,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
10.

Conference Proceedings
Conference Proceedings
10. Defect related recombination processes in low-dimensional structures of ZnCdSe/ZnSe,CdTe/CdMnTe and GaAs/AlGaAs
Godlewski,M. ; Hommel,D. ; Wojtowicz,T. ; Karczewski,G. ; Kossut,J. ; Reginski,K. ; Bugajski,M. ; Bergman,J.P. ; Monemar,B.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1665-1670,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263