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11 results

Conference Proceedings

1. THECHEMICAL ETCH OF TUNGSTEN SINGLE CRYSTALS AND FOILS WITH XEF2

Bensaoula, A. ; Stozier, J. ; Ignatiev, A. ; Wolfe, J.

Pub. info.:	Plasma processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.. pp.429-434, 1986. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	68

Conference Proceedings

2. THE INFLUENCE OF Sb DOPING ON THE GROWTH AND ELECTRONIC PROPERTIES OF GaAs (100) AND A1GaAs (100)

Bensaoula, A. ; Jamison, K. D. ; Chen, H. C. ; Ignatiev, A.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.85-90, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

3. Photo-assisted RIE of GaN in BCl3/Cl2/N2

Medelci, N. ; Tempez, A. ; Berishev, I. ; Starikov, D. ; Bensaoula, A.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.535-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

4. ARSENIC INCORPORATION IN InP EPILAYERS AND ARSENIDE/InP HETEROSTRUCTURES GROWN BY CHEMICAL BEAM EPITAXY

Rossignol, V. ; Bensaoula, A. H. ; Freundlich, A. ; Bensaoula, A. ; Neu, G.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.181-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

Conference Proceedings

5. Boron Nitride Materials for Tribological and High-Temperature, High-Power Devices

Badi, N. ; Tempez, A. ; Starikov, D. ; Medelci, N. ; Bensaoula, A. ; Kulik, J. ; Klimentov, S. M. ; Garnov, S. V. ; Ageev, V. P. ; Ugarov, M. V. ; Lee, S. ; Perry, S. S. ; Waters, K. ; Shultz, A.

Pub. info.:	Chemical aspects of electronic ceramics processing : symposium held November 30-December 4, 1997, Boston, Massachusetts, U.S.A.. pp.359-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	495

Conference Proceedings

6. Chemical beam epitaxy grown Indium Gallium arsenide tunnel junctions

Medelci, N. ; Bensaoula, A. ; Vilela, M. F. ; Freundlich, A.

Pub. info.:	III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.. pp.453-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	300

Conference Proceedings

7. EFFECTS OF PHOSPHORUS EXPOSURE ON ARSENIC-STABILIZED GaAs 2｡ﾟ4 SURFACE

Bensaoula, A. H. ; Freundlich, A. ; Bensaoula, A. ; Rossignol, V.

Pub. info.:	Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A.. pp.231-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	312

Conference Proceedings

8. Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in Cl2/Ar and BCl3/Cl2/Ar Chemistries

Medelci, N. ; Tempez, A. ; Kim, E. ; Badi, N. ; Starikov, D. ; Berichev, I. ; Bensaoula, A.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.285-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

9. TOF-LEIS Characterization and Growth of GaN Thin Films Grown with ECR and NH3

Kim, E. ; Bensaoula, A. ; Rusakova, I. ; Shultz, A. ; Waters, K.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.319-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

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Conference Proceedings

10. TEM Study of Strain Compensated InP/GaAs/GaP/GaAs Superlattice Structures

Rusakova, I. ; Bensaoula, A. H. ; Bensaoula, A.

Pub. info.:	Thin films - structure and morphology : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.445-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	441

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Author: Bensaoula, A.