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12 results

Conference Proceedings

1. Structure of Carrot Derects in 4H-SiC Epilayers

Zhang, X. ; Ha, S. ; Benamara, M. ; Skowronski, M. ; Sumakeris, J.J. ; Ryu, S. ; Paisley, M.J. ; O'Loughlin, M.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.327-332, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Diffraction Studies of Bonded Silicon Interfaces

Benamara, M. ; Howes, P.B. ; Nielsen, M. ; Berg Rasmussen, F. ; Feidenhans'l, R. ; Hermansson, K. ; Grey, F.

Pub. info.:	Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications. pp.280-284, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-36

Conference Proceedings

3. Electrical Characterization of Bonded Unipolar Silicon Junctions

Vedde, J. ; Rasmussen, K. ; Viscor, P. ; Caraglia, C. ; Benamara, M.

Pub. info.:	Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications. pp.340-348, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-36

Conference Proceedings

4. Polarity of GaN

Liliental-Weber, Z. ; Benamara, M. ; Richter, O. ; Swider, W. ; Washburn, J. ; Grzegory, I. ; Porowski, S. ; Yang, J. W. ; Nakamura, S.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.363-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

5. Direct Wafer Bonding of Preamorphized Silicon Wafers

Laporte, A. ; Sarrabayrouse, G. ; Benamara, M. ; Claverie, A. ; Rocher, A. ; Lescouzeres, L. ; PeyreLavigne, A.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.869-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

Conference Proceedings

6. Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

Benamara, M. ; Rocher, A. ; Laporte, A. ; Sarrabayrouse, G. ; Lescouzeres, L. ; PeyreLavigne, A. ; Fnaiech, M. ; Claverie, A.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.863-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

Conference Proceedings

7. Effect of the doping and the Al content on the microstructure and morphology of thin Alx Ga1-xN layers grown by MOCVD

Mazur, J. H. ; Benamara, M. ; Liliental-Weber, Z. ; Swider, W. ; Washburn, J. ; Eiting, C. J. ; Dupuis, R. D.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W3.77.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

8. TEM Study of Defects in Laterally Overgrown GaN Layers

Liliental-Weber, Z. ; Benamara, M. ; Swider, W. ; Washburn, J. ; Park, J. ; Grudowski, P. A. ; Eiting, C. J. ; Dupuis, R. D.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G4.6.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

9. Atomic scale analysis of InGaN multi-quantum wells

Benamara, M. ; Liliental-Weber, Z. ; Swider, W. ; Washburn, J. ; Dupuis, R. D. ; Grudowski, P. A. ; Eiting, C. J. ; Yang, J. W. ; Khan, M. A.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.357-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

10.

Conference Proceedings

10. TEM study of Mg-doped bulk GaN crystals

Liliental-Weber, Z. ; Benamara, M. ; Ruvimov, S. ; Mazur, J. H. ; Washburn, J. ; Grzegory, I. ; Porowski, S.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.363-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

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