1.

Conference Proceedings
Conference Proceedings
1. On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C
Trauwaert,M.-A. ; Vanhellemont,J. ; Maes,H.E. ; Bavel,A.-M.Van ; Langouche,G. ; Stesmans,A. ; Clauws,P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1147-1152,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
Bavel,A.-M.Van ; Degroote,S. ; Vantomme,A. ; Stesmans,A. ; Langouche,G.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1515-1520,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation
Langouche,G. ; Wu,M.F. ; Wachter,J.De ; Pattyn,H. ; Bavel,A.-M.Van
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.803-808,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. Co-Acceptor Complexes in Si
Bavel,A.-M.Van ; Langouche,G.
Pub. info.: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.267-272,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 117-118
5.

Conference Proceedings
Conference Proceedings
5. Mossbauer spectroscopy of Fe in silicon with the novel Iaser-ionized 57Mn+ ion beam at ISOLDE
Weyer,G. ; Degroote,S. ; Fanciulli,M. ; Fedoseyev,V.N. ; Langouch,G. ; Mishin,V.I. ; Bavel,A.-M.Van ; Vantomme,A. ; Collaboration,the ISOLDE
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.437-442,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263