1.

Conference Proceedings
Conference Proceedings
1. *THE SYMMETRY OF THE EL2 DEFECT IN GaAs
Trautman, P. ; Baranowski, J.M.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.821-826,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
2.

Conference Proceedings
Conference Proceedings
2. Field-Effect Structure With Double Layer of InGaAs/GaAs Quantum Dots - A New Concept of Electron Tunneling Device
Babinski, Adam ; Baranowski, J.M. ; Leon, R. ; Jagadish, C.
Pub. info.: Semiconductor quantum dots II : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 642
3.

Conference Proceedings
Conference Proceedings
3. Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN
Wojdak, M. ; Baranowski, J.M. ; Wysmolek, A. ; Pakula, K. ; Stepniewski, R. ; Potemski, M. ; Grzegory, I. ; Porowski, S.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.533-540,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
4.

Conference Proceedings
Conference Proceedings
4. Effects of Annealing on Self-Assembled InAs Quantum Dots and Wetting Layer in GaAs Matrix
Babinski, A. ; Jasinski, J. ; Baranowski, J.M. ; Bozek, R. ; Szepielow, A.
Pub. info.: Semiconductor quantum dots II : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 642