1.

Conference Proceedings
Conference Proceedings
1. 6H-SiC MOS Capacitors on Sloped Surfaces:Realisation,Characterisation and Electrical Results
Lanois,F. ; Planson,D. ; Lassagne,P. ; Raynaud,C. ; Bano,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1029-1032,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Impact Ionization in 6H-SiC MOSFET's
Bano,E. ; Ouisse,T. ; Scharnholz,S.P. ; Golz,A.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1009-1012,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268