1.

Conference Proceedings
Conference Proceedings
1. Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics
Brezeanu, M. ; Badila, M. ; Brezeanu, G. ; Udrea, F. ; Boianceanu, C. ; Amaratunga, G.A.J. ; Zekentes, K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1087-1090,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
Brezeanu, G. ; Badila, M. ; Godignon, P. ; Millan, J. ; Udrea, F. ; Mihaila, A. ; Amaratunga, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1301-1304,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. 6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
Badila, M. ; Brezeanu, G. ; Chante, J. P. ; Locatelli, M. -L. ; Millan, J. ; Godignon, P. ; Lebedev, A. ; Lungu, P. ; Banu, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1355-1358,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage
Brezeanu, G. ; Badila, M. ; Millan, J. ; Godignon, P. ; Locatelli, M. L. ; Chante, J. P. ; Lebedev, A. ; Banu, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1219-1222,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
5.

Conference Proceedings
Conference Proceedings
5. An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
Brezeanu, G. ; Badila, M. ; Godignon, P. ; Millan, J. ; Udrea, F. ; Mihaila, A. ; Amaratunga, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1301-1304,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes
Brezeanu, G. ; Udrea, F. ; Amaratunga, G. ; Mihaila, A. ; Godignon, P. ; Millan, J. ; Badila, M.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.965-968,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436