1.

Conference Proceedings
Conference Proceedings
1. The Effect of Growth Temperature on the Microstructure of MOVPE AIN/Si(111)
Zhou, Mei ; Perkins, N. R. ; Rehder, E. ; Kuech, T. F. ; Babcock, S. E.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.185-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Dislocation arrangement in a thick LEO GaN film on sapphire
Dunn, K. A. ; Babcock, S. E. ; Stone, D. S. ; Matyi, R. J. ; Zhang, L. ; Kuech, T. F.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W2.11.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
3.

Conference Proceedings
Conference Proceedings
3. Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE
Dunn, K. A. ; Babcock, S. E. ; Vaudo, R. ; Phanse, V. ; Redwing, J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.417-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. Structure of AlN on Si (111) Deposited With Metalorganic Vapor Phase Epitaxy
Rehder, E. ; Zhou, M. ; Zhang, L. ; Perkins, N. R. ; Babcock, S. E. ; Kuech, T. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.56.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537