1.

Conference Proceedings
Conference Proceedings
1. AIN/GaN and AlGaN/GaN Heterostructures Grown by HVPE on SiC Substrates
Melnik, Yu. V. ; Nikolaev, A. E. ; Stepanov, S. I. ; Zubrilov, A. S. ; Nikitina, I. P. ; Vassilevski, K. V. ; Tsvetkov, D. V. ; Babanin, A. I. ; Musikhin, Yu. G. ; Tretyakov, V. V. ; Dmitriev, V. A.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.245-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed under Various Conditions
Vassilevski, K. V. ; Zekentes, K. ; Constantinidis, G. ; Papanicolaou, N. ; Nikitina, I. P. ; Babanin, A. I.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1017-1020,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. GaN 20-mm diameter ingots grown from melt-solution by seeded technique
Sukhoveyev, V. A. ; Ivantsov, V. A. ; Nikitina, I. P. ; Babanin, A. I. ; Polyakov, A. Y. ; Govorkov, A. V. ; Smirnov, N. B. ; Mil'vidskii, M. G. ; Dmitriev, V. A.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W6.6.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595