1.

Conference Proceedings
Conference Proceedings
1. CHARACTERIZATION OF ELECTRON TRAPS IN GaAs-GaAlAs SUPERLATTICES.
SILLION,F. ; MAUGER,A. ; BOURGOIN,J.C. ; DEVFAUD,B. ; REGRENY,A. ; STIEVENARD,D.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part1  pp.199-204,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
2.

Conference Proceedings
Conference Proceedings
2. A MODEL FOR THE ATOMIC CONFIGURATION OF THE EL2 DEFECT IN GaAs.
STIFVENARD,D. ; BARDELEBEN,H.J.von ; BOURGOIN,J.C. ; HUBER,A.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part1  pp.305-310,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
3.

Conference Proceedings
Conference Proceedings
3. EPR OBSERVATION OF THE ARSENIC ANTISITE-ARSENIC VACANCY COMPLEX.
BARDELEBEN,H.J.von ; MIRET,A. ; BOURGOIN,J.C.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part1  pp.299-304,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
4.

Conference Proceedings
Conference Proceedings
4. ACCURATE DETERMINATION OF CAPTURE TIME CONSTANT OF INTERFACE STATES IN MIS STRUCTURES.
VUILLAUME,D. ; BARRIER,J. ; STIEVENARD,D. ; BOURGOIN,J.C.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.499-504,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
5.

Conference Proceedings
Conference Proceedings
5. ON THE BEHAVIOUR OF HOLE CAPTURE WITH MULTIPHONON EMISSION AT DEEP LEVEL DEFECTS H3 and H4 IN p-GaAs.
MURAWALA,P.A. ; STIEVENARD,D. ; LANNOO,M. ; BOURGOIN,J.C.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.463-468,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12