1.

Conference Proceedings
Conference Proceedings
1. In-Line Characterization of Heterojunction Bipolar Transistor Base Layers by High-Resolution X-Ray Diffraction
N. Duy Nguyen ; R. Loo ; A. Hikavyy ; B. Van Daele ; P. Ryan
Pub. info.: Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007) (plus Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes).  pp.151-160,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 10(1)
2.

Conference Proceedings
Conference Proceedings
2. Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium
E.R. Simoen ; A. Brugere ; A. Satta ; B. Van Daele ; B. Brijs
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.1031-1038,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
3.

Conference Proceedings
Conference Proceedings
3. Study of Ni-Silicide Contacts to Si:C Source/Drain.
S. Mertens ; Y. Cho ; F. Nouri ; R. Schreutelkamp ; Y. Kim ; P. Verheyen ; J. Steenbergen ; C. Vrancken ; H. Bender ; O. Richard ; B. Van Daele ; W. Vandervorst ; P. Absil ; S. Kubicek ; C. Demeurisse ; Z. Tokei ; A. Lauwers ; L. Geenen
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.139-148,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
4.

Conference Proceedings
Conference Proceedings
4. Junction Architectures for Planar Devices
B. J. Pawlak ; R. Duffy ; T. Hoffman ; S. Seven ; S. Feich ; P. Eyhen ; B. Van Daele ; W. Vandervorst ; R. J. Lander
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.351-364,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)